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RFIC and MMIC Design

RF CMOS transceiver layoutRF IC design and MMIC design (Microwave Monolithic Integrated Circuit design) are services that Plextek has been providing to its clients for over 10 years. In that time we have carried out the design of over 30 RFICs and MMICs using a range of Si IC and GaAs IC processes and foundries. We have experience of using foundries in Europe, the US and the Far East and have undertaken IC design using a wide range of semiconductor processes, including: Si bipolar, Si RF CMOS, AlGaAs HBT, InGaP HBT, GaAs MESFET, PHEMT and PIN diode. Our IC design experience cover frequencies from baseband (low-IF receivers with baseband demodulation) to mm-wave MMICs operating at frequencies beyond 40GHz. Our chip designers are from a commercial background with experience of taking IC designs from conception through to high volume manufacture and are aware of the issues associated with packaging, verification, validation, production test, yield and cost.

8" diameter wafer of Si RF CMOS transceiver ICs

Plextek has carried out Si IC design for major Si vendors such as National Semiconductor. This has involved working with the IC design team at National Semiconductor on the development of a number of RF CMOS transceiver products. It included activities such as radio system simulation, AGC system design, demodulator design, active slicing, clock recovery design and the design of a diversity selection system. The layout above right is one of these RF CMOS transceivers, which is now in high volume production with over 500 million parts shipped worldwide. For more details please download our transeiver IC design case study.

2-18GHz upconverterWe have designed full custom GaAs MMICs for a wide range of applications, including components for GSM handsets, mm-wave ICs for broadband wireless access, wide band LNAs, limiters and frequency converters for ESM systems, and precision attenuators for instrumentation. The die photograph to the right shows a 2-18GHz unpconverter MMIC fabricated on Triquints 0.25µm PHEMT process. Our clients include major component suppliers, such as Sony Semiconductor and advanced system developers such as QinetiQ and Aeroflex. We are also able to re-design obsolete MMICs, or MMICs realised on obsolete processes, so that pad compatible components can be manufactured on commercially available foundry processes.

Plextek is an approved independent design house for the following foundries:

GCS is a pure-play foundry offering PHEMT, InGaP and InP HBT processes. The two die below are Plextek designs previously fabricated by GCS. On the left is a U-NII band Power Amplifier that covers both the 5.2GHz and the 5.8GHz bands. The measured gain is around 18dB with a 1dB compression point of just under +26dBm. On the right is a 5.8GHz VCO that has a measured phase noise of -105dBc/Hz at 100kHz offset.

U-NII band Power Amplifier 5.8GHz InGaP HBT VCO

WIN was the world's first pure-play foundry to offer fabrication on 6" diameter wafers. Processes offered include 0.15µm gate length PHEMT and InGaP HBT.

6" diameter GaAs wafer from WIN

For more information on how you can make use of Plextek's IC design skills contact us.